TOKYO - Toshiba Electronic Components and Storage Devices Inc. ("Toshiba") has launched a new series of next generation 650V power MOSFETs for data center server power supply, solar energy (PV) power regulator, uninterruptible power supply system (UPS) and other industrial applications.



TK040N65Z is the first device in DTMOS VI series. It is a 650V device that supports continuous drain current (ID) up to 57A and pulse current (IDP) up to 228A. The new device provides ultra-low drain source on resistance RDS (ON) of 0.04Omega (0.033Omega typical value), which can effectively reduce the loss in power supply applications. Thanks to lower capacitance design, this enhanced device has become an ideal choice for modern high-speed power applications. .



The reduction of key performance index/quality factor (FoM) - RDS (ON) x Qgd improves the efficiency of power supply. Compared with the previous generation of DTMOS IV-H devices, this important index of TK040N65Z is increased by 40%, which means that the power efficiency is significantly improved. According to measurement, the power efficiency in 2.5kW PFC circuit is increased by about 0.36%[1].



The new device uses industry standard TO-247 package, which not only realizes compatibility with the old version design, but also applies to new projects.



To meet market demand, Toshiba will continue to expand its product lineup and help improve the efficiency of power supply and power system.



The mass production and shipment of the new device will start on the same day.