• High surge forward current (I_FSM): Approximately 7 to 9 times of current rating I_F(DC)
• Figure of Merit  (V_F･Q_c^{[Note 1]}): Approximately 30% reduction compared to the 1^st generation devices, realizing higher efficiency
• Various package lineup including isolated type and surface mount type：suit various design requirements

SiC SBDs are suitable for power factor correction (PFC) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.

• Consumer electronics and office equipment: 4K LCD TVs, projectors, multifunction copiers, etc.
• Industrial equipment: Communication base stations, PC servers, etc.
• AC-DC Power Supplies
• DC-DC Power Supplies

^*1  V_F・Q_C  : The product of forward voltage and total charge (V_F*Q_C) indicates the loss performance of SiC Schottky barrier diodes. When devices with the same current rating are compared, a device with a lower VF*QC provides a lower loss.