Radio-frequency bipolar transistor
Application Scope | VHF/UHF band low noise, low distortion amplifier |
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Polarity | NPN |
Number of Circuits | 1 |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | 日本 |
Toshiba Package Name | UFM |
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Package Image | ![]() |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | 查看 |
Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
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Collector Current | IC | 0.08 | A |
Collector power dissipation | PCmounted | 900 | mW |
Junction temperature | Tj | 150 | ℃ |
Collector-emitter voltage | VCEO | 12 | V |
项目 | 符号 | 条件 | 数值 | 单位 |
---|---|---|---|---|
Insertion Gain (Typ.) | |S21|2 | f=1GHz | 12 | dB |
Transition frequency (Typ.) | fT | - | 7 | GHz |
Noise Figure (Typ.) | NF | f=1GHz | 1.45 | dB |