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SSM6J214FE
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SSM6J214FE
Small Low ON resistance MOSFETs
产品概要
| Application Scope | Power Management Switches |
|---|---|
| Polarity | P-ch |
| Generation | U-MOSⅥ |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
封装类型
| Toshiba Package Name | ES6 |
|---|---|
| Package Image |
|
| JEITA | SC-107C |
| Package Code | SOT-563 |
| Pins | 6 |
| Mounting | Surface Mount |
|
Width×Length×Height (mm) |
1.6×1.6×0.55 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -30 | V |
| Gate-Source voltage | VGSS | +/-12 | V |
| Drain current | ID | -3.6 | A |
| Power Dissipation | PD | 0.5 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -1.2 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 50 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 57 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 77.6 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 149.6 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 560 | pF |
| Total gate charge (Typ.) | Qg | VGS=-4.5V | 7.9 | nC |
