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Radio-frequency SiGe Heterojunction Bipolar Transistor
| Application Scope | UHF/SHF band low noise amplifier |
|---|---|
| Polarity | NPN |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
| Toshiba Package Name | USQ |
|---|---|
| Package Image | |
| Package Code | SOT-343 |
| Pins | 4 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.95 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Collector Current | IC | 0.05 | A |
| Collector power dissipation | PC | 100 | mW |
| Collector power dissipation (mounted on board) | PC | 250 | mW |
| Junction temperature | Tj | 150 | ℃ |
| Collector-emitter voltage | VCEO | 4 | V |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Insertion Gain (Typ.) | |S21|2 | f=2GHz | 16.9 | dB |
| Transition frequency (Typ.) | fT | - | 26.5 | GHz |
| Noise Figure (Typ.) | NF | f=2GHz | 0.55 | dB |