PRODUCTS CENTER
Small-signal MOSFET 2 in 1
Application Scope | Power Management Switches / High-Speed Switching |
---|---|
Polarity | N-ch×2 |
Generation | U-MOSⅢ |
Internal Connection | Independent |
Component Product (Q1) | SSM6N40TU |
Component Product (Q2) | SSM6N40TU |
AEC-Q101 | Conform(*) |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | Japan / Thailand |
*: For detail information, please contact to our sales.
Toshiba Package Name | UF6 |
---|---|
Package Image | |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | 30 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-20 | V |
Drain current (Q1/Q2) | ID | 1.6 | A |
Power Dissipation | PD | 0.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 2.6 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 182 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=10V | 122 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 180 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=10V | 5.1 | nC |