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Small-signal MOSFET 2 in 1
Application Scope | High-Speed Switching |
---|---|
Polarity | N-ch×2 |
Generation | U-MOSⅢ |
Internal Connection | Independent |
Component Product (Q1) | SSM3K36MFV |
Component Product (Q2) | SSM3K36MFV |
AEC-Q101 | Conform(*) |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | Japan / Thailand |
*: For detail information, please contact to our sales.
Toshiba Package Name | UF6 |
---|---|
Package Image | |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-10 | V |
Drain current (Q1/Q2) | ID | 500 | mA |
Power Dissipation | PD | 0.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 1.52 | Ω |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 1.14 | Ω |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 850 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 660 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=5V | 630 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 46 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4V | 1.23 | nC |