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SSM6N36FE
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SSM6N36FE
Small-signal MOSFET 2 in 1
Description
| Application Scope | High-Speed Switching |
|---|---|
| Polarity | N-ch×2 |
| Generation | U-MOSⅢ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM3K36MFV |
| Component Product (Q2) | SSM3K36MFV |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Japan / Thailand |
*: For detail information, please contact to our sales.
Package Information
| Toshiba Package Name | ES6 |
|---|---|
| Package Image | |
| JEITA | SC-107C |
| Package Code | SOT-563 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
1.6×1.6×0.55 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
| Gate-Source voltage (Q1/Q2) | VGSS | +/-10 | V |
| Drain current (Q1/Q2) | ID | 500 | mA |
| Power Dissipation | PD | 0.15 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 1.52 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 1.14 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 850 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 660 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=5V | 630 | mΩ |
| Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 46 | pF |
| Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4V | 1.23 | nC |
