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SSM6N35FU
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SSM6N35FU
Small-signal MOSFET 2 in 1
Description
| Application Scope | High-Speed Switching / Analog Switches |
|---|---|
| Polarity | N-ch×2 |
| Generation | π-MOSⅥ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM3K35MFV |
| Component Product (Q2) | SSM3K35MFV |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Japan / Thailand |
*: For detail information, please contact to our sales.
Recommended Product
This product is under full production, but the following new product(s) are also recommended for new designs.
| Part Number | Compatible level | Notes |
|---|---|---|
| SSM6N35AFU | Package and characteristics are almost same | - |
Package Information
| Toshiba Package Name | US6 |
|---|---|
| Package Image | |
| JEITA | SC-88 |
| Package Code | SOT-363 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.9 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
| Gate-Source voltage (Q1/Q2) | VGSS | +/-10 | V |
| Drain current (Q1/Q2) | ID | 180 | mA |
| Power Dissipation | PD | 0.2 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.2V | 20 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 8.0 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 4.0 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 3.0 | Ω |
| Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 9.5 | pF |
