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SSM6K504NUNew Product

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UDFN6B

SSM6K504NUNew Product

Small Low ON resistance MOSFETs

Description

Application Scope High-Speed Switching
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name UDFN6B
Package Image UDFN6B
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.0×0.75
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 9.0 A
Power Dissipation PD 1.25 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 26
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 19.5
Input capacitance (Typ.) Ciss - 620 pF
Total gate charge (Typ.) Qg VGS=4.5V 4.8 nC
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