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SSM3J66MFVNew Product
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SSM3J66MFVNew Product
Small Low ON resistance MOSFETs
Description
| Application Scope | Power Management Switches |
|---|---|
| Feature | 1.2-volt gate drive voltage |
| Polarity | P-ch |
| Generation | U-MOSⅥ |
| Internal Connection | Single |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Thailand |
*: For detail information, please contact to our sales.
Package Information
| Toshiba Package Name | VESM |
|---|---|
| Package Image | |
| JEITA | SC-105AA |
| Package Code | SOT-723 |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
1.2×1.2×0.5 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -20 | V |
| Gate-Source voltage | VGSS | +6/-8 | V |
| Drain current | ID | -800 | mA |
| Power Dissipation | PD | 0.15 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 390 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 480 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 660 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 900 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.2V | 4.0 | Ω |
| Input capacitance (Typ.) | Ciss | - | 100 | pF |
| Total gate charge (Typ.) | Qg | VGS=-4.5V | 1.6 | nC |
