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SSM3J374RNew Product

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SOT-23F

SSM3J374RNew Product

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches
Feature High ESD protected
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-23F
Package Image SOT-23F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.4×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -30 V
Gate-Source voltage VGSS +10/-20 V
Drain current ID -4.0 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 71
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 105
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 136
Input capacitance (Typ.) Ciss - 280 pF
Total gate charge (Typ.) Qg VGS=-10V 5.9 nC
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