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Small Low ON resistance MOSFETs
Application Scope | Power Management Switches |
---|---|
Feature | High ESD protected |
Polarity | P-ch |
Generation | U-MOSⅥ |
Internal Connection | Single |
AEC-Q101 | Conform(*) |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | Thailand |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-23F |
---|---|
Package Image | |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.9×2.4×0.8 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | -20 | V |
Gate-Source voltage | VGSS | +6/-8 | V |
Drain current | ID | -4.0 | A |
Power Dissipation | PD | 1.0 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | -1.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 55 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 75 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 100 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 150 | mΩ |
Input capacitance (Typ.) | Ciss | - | 630 | pF |
Total gate charge (Typ.) | Qg | VGS=-4.5V | 10.4 | nC |