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SSM3J168FNew Product
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SSM3J168FNew Product
Small-signal MOSFET
Description
| Application Scope | High-Speed Switching / Analog Switches |
|---|---|
| Polarity | P-ch |
| Generation | U-MOSⅥ |
| Internal Connection | Single |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Thailand |
*: For detail information, please contact to our sales.
Package Information
| Toshiba Package Name | S-Mini |
|---|---|
| Package Image | |
| JEITA | SC-59 |
| JEDEC | TO-236MOD |
| Package Code | SOT-346 |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.9×2.5×1.1 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -60 | V |
| Gate-Source voltage | VGSS | +10/-20 | V |
| Drain current | ID | -400 | mA |
| Power Dissipation | PD | 0.6 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -2.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1.55 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 1.9 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 2.0 | Ω |
| Input capacitance (Typ.) | Ciss | - | 82 | pF |
| Total gate charge (Typ.) | Qg | VGS=-10V | 3.0 | nC |
