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SSM6L35FU
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SSM6L35FU
Small Low ON resistance MOSFETs
产品概要
| Application Scope | High-Speed Switching / Analog Switches |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | π-MOSⅥ / π-MOSⅥ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM3K35MFV |
| Component Product (Q2) | SSM3J35MFV |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 / 泰国 |
*: For detail information, please contact to our sales.
封装类型
| Toshiba Package Name | US6 |
|---|---|
| Package Image | |
| JEITA | SC-88 |
| Package Code | SOT-363 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.9 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 20 | V |
| Gate-Source voltage (Q1) | VGSS | +/-10 | V |
| Drain current (Q1) | ID | 180 | mA |
| Drain-Source voltage (Q2) | VDSS | -20 | V |
| Gate-Source voltage (Q2) | VGSS | +/-10 | V |
| Drain current (Q2) | ID | -100 | mA |
| Power Dissipation | PD | 0.2 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.2V | 20 | Ω |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.5V | 8.0 | Ω |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=2.5V | 4.0 | Ω |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4V | 3.0 | Ω |
| Input capacitance (Q1) (Typ.) | Ciss | - | 9.5 | pF |
| Gate threshold voltage (Q2) (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4V | 8.0 | Ω |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-2.5V | 11 | Ω |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.5V | 22 | Ω |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.2V | 44 | Ω |
| Input capacitance (Q2) (Typ.) | Ciss | - | 12.2 | pF |
