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SSM6L40TU
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SSM6L40TU
Small Low ON resistance MOSFETs
产品概要
| Application Scope | Power Management Switches / High-Speed Switching |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅢ / U-MOSⅢ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM6N40TU |
| Component Product (Q2) | SSM6P40TU |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 / 泰国 |
*: For detail information, please contact to our sales.
封装类型
| Toshiba Package Name | UF6 |
|---|---|
| Package Image | |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 30 | V |
| Gate-Source voltage (Q1) | VGSS | +/-20 | V |
| Drain current (Q1) | ID | 1.6 | A |
| Drain-Source voltage (Q2) | VDSS | -30 | V |
| Gate-Source voltage (Q2) | VGSS | +/-20 | V |
| Drain current (Q2) | ID | -1.4 | A |
| Power Dissipation | PD | 0.5 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 2.6 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4V | 182 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 122 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 180 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 5.1 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -2.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 226 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4V | 403 | mΩ |
| Input capacitance (Q2) (Typ.) | Ciss | - | 120 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 2.9 | nC |
