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Power MOSFET (N-ch + P-ch complementary)
| Application Scope | Motor Drivers / Mobile Equipments |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅣ / U-MOSⅥ |
| Internal Connection | Independent |
| AEC-Q101 | Conform |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
| Toshiba Package Name | PS-8 |
|---|---|
| Package Image | |
| Pins | 8 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.9×2.8×0.8 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 40 | V |
| Gate-Source voltage (Q1) | VGSS | +/-20 | V |
| Drain current (Q1) | ID | 5.0 | A |
| Drain-Source voltage (Q2) | VDSS | -40 | V |
| Gate-Source voltage (Q2) | VGSS | +10/-20 | V |
| Drain current (Q2) | ID | -4.0 | A |
| Power Dissipation | PD | 1.77 | W |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 3.0 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=6V | 62.8 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 36.3 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 505 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 11.8 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -3.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 56.8 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-6V | 82.2 | mΩ |
| Input capacitance (Q2) (Typ.) | Ciss | - | 810 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 18 | nC |