Intelligent power device (2-ch High side power-MOSFET driver with built-in charge pump)
| Input / Output | H/H |
|---|---|
| Input / Output (Q1) | H/H |
| Input / Output (Q2) | H/H |
| Number of Circuits | 2 |
| Protection Functions | Overcurrent / Undervoltage |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
| Toshiba Package Name | SSOP |
|---|---|
| Pins | 24 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Power Dissipation | PD | 0.8 | W |
| Junction temperature | Tj | 150 | ℃ |
| Operating Temperature (Max) | Topr | 110 | ℃ |
| Operating Temperature (Min) | Topr | -40 | ℃ |
| Power Supply Voltage | VDD | 30 | V |
| Drain-Source voltage | VDSS | 30 | V |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Operating supply voltage (Max) | VDD(opr) | - | 18 | V |
| Operating supply voltage (Min) | VDD(opr) | - | 8 | V |