Small Low ON resistance MOSFETs
| Application Scope | High-Speed Switching / Power Management Switches |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅢ |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
| Toshiba Package Name | ES6 |
|---|---|
| Package Image | |
| JEITA | SC-107C |
| Package Code | SOT-563 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
1.6×1.6×0.55 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V |
| Gate-Source voltage | VGSS | +/-10 | V |
| Drain current | ID | 2.0 | A |
| Power Dissipation | PD | 0.5 | W |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 307 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 214 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 164 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 126 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 195 | pF |
| Total gate charge (Typ.) | Qg | VGS=4V | 3.4 | nC |