Small Low ON resistance MOSFETs
| Application Scope | Power Management Switches |
|---|---|
| Polarity | P-ch |
| Generation | U-MOSⅦ |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 泰国 |
| Toshiba Package Name | CST3C |
|---|---|
| Package Image | |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
0.8×0.6×0.38 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -20 | V |
| Gate-Source voltage | VGSS | +/-10 | V |
| Drain current | ID | -700 | mA |
| Power Dissipation | PD | 0.5 | W |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 500 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 700 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 1.07 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 1.55 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.2V | 11.3 | Ω |
| Input capacitance (Typ.) | Ciss | - | 48 | pF |