Power MOSFET (N-ch single 60V<VDSS≤150V)
| Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅧ-H |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Malaysia |
| Toshiba Package Name | SOP Advance |
|---|---|
| Pins | 8 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
5.0×6.0×0.95 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 150 | V |
| Gate-Source voltage | VGSS | +/-20 | V |
| Drain current | ID | 29 | A |
| Power Dissipation | PD | 57 | W |
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 4.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 33 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 810 | pF |
| Total gate charge (Typ.) | Qg | VGS=10V | 10.6 | nC |
