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TPC8408
Power MOSFET (N-ch + P-ch complementary)
产品概要
| Application Scope | Mobile Equipments / Motor Drivers |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅥ-H / U-MOSⅥ |
| Internal Connection | Independent |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 中国 |
封装类型
| Toshiba Package Name | SOP-8 |
|---|---|
| Package Image | |
| Pins | 8 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
4.9×6.0×1.5 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 40 | V |
| Gate-Source voltage (Q1) | VGSS | +/-20 | V |
| Drain current (Q1) | ID | 6.1 | A |
| Drain-Source voltage (Q2) | VDSS | -40 | V |
| Gate-Source voltage (Q2) | VGSS | +/-20 | V |
| Drain current (Q2) | ID | -5.3 | A |
| Power Dissipation | PD | 1.5 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 2.3 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 36 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 32 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 850 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 14 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -2.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 43 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 53 | mΩ |
| Input capacitance (Q2) (Typ.) | Ciss | - | 1105 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 24 | nC |