Small Low ON resistance MOSFETs
| Application Scope | Power Management Switches / High-Speed Switching |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅢ / U-MOSⅤ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM6N42FE |
| Component Product (Q2) | SSM6P41FE |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
| Toshiba Package Name | ES6 |
|---|---|
| Package Image | |
| JEITA | SC-107C |
| Package Code | SOT-563 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
1.6×1.6×0.55 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 20 | V |
| Gate-Source voltage (Q1) | VGSS | +/-10 | V |
| Drain current (Q1) | ID | 800 | mA |
| Drain-Source voltage (Q2) | VDSS | -20 | V |
| Gate-Source voltage (Q2) | VGSS | +/-8 | V |
| Drain current (Q2) | ID | -720 | mA |
| Power Dissipation | PD | 0.15 | W |
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.5V | 600 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.8V | 450 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=2.5V | 330 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 240 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 90 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=4.5V | 2.0 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 300 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-2.5V | 440 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.8V | 670 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.5V | 1.04 | Ω |
| Input capacitance (Q2) (Typ.) | Ciss | - | 110 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-4.5V | 1.76 | nC |